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Thin Film Microtransformer Integrated on Silicon for Signal Isolation
2007 / IEEE
This item was taken from the IEEE Periodical ' Thin Film Microtransformer Integrated on Silicon for Signal Isolation ' Microtransformers have been fabricated on silicon substrates with the aim of providing isolation for signal and power. Interleaved primary and secondary windings are sandwiched between two electroplated magnetic layers. The transformer has a turn ratio of 4:4. It has a primary inductance of 400 nH at low frequencies and dc resistance of 0.48 Omega. The voltage gain is -1 dB between 1-20 MHz with a 50-Omega load. When compared to previously reported microtransformer characteristics this is the highest reported voltage gain for a microtransformer
Thin Film Microtransformer
1 To 20 Mhz
Semiconductor Thin Films
Perpendicular Magnetic Anisotropy
Fields, Waves And Electromagnetics
Electroplated Magnetic Layers