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Observations of NBTI-induced atomic-scale defects

By: Krishnan, A.T.; Lenahan, P.M.; Campbell, J.P.; Krishnan, S.;

2006 / IEEE


This item was taken from the IEEE Periodical ' Observations of NBTI-induced atomic-scale defects ' A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO 2-based pMOSFETs. In SiO2 devices, the defects include two Si/SiO2 interface silicon dangling bond centers (Pb0 and Pb1) and may also include an oxide silicon dangling bond center (E'). The observations indicate that both P b0 and Pb1 defects play major roles in these SiO 2-based devices and suggest that E' centers could play an important role