Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics

By: Huang-Chun Wen; Harris, H.R.; Young, C.D.; Hongfa Luan; Byoung Hun Lee; Kisik Choi; Dim-Lee Kwong; Majhi, P.; Bersuker, G.; Alshareef, H.N.;

2006 / IEEE

Description

This item was taken from the IEEE Periodical ' On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics ' This letter correlates fast transient charging (FTC) in high-k gate dielectrics to variations in its oxygen content. Analysis of electrical and physical data suggests that the observed enhancement of FTC may be caused by reduction of the oxygen content in the high-k film due to O scavenging process induced by the HfSix metal electrode. A hypothesis correlating O scavenging from the high-k dielectric to O vacancy formation, which contributes to FTC, is proposed