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On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics
By: Huang-Chun Wen; Harris, H.R.; Young, C.D.; Hongfa Luan; Byoung Hun Lee; Kisik Choi; Dim-Lee Kwong; Majhi, P.; Bersuker, G.; Alshareef, H.N.;
2006 / IEEE
This item was taken from the IEEE Periodical ' On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High-$k$ Dielectrics ' This letter correlates fast transient charging (FTC) in high-k gate dielectrics to variations in its oxygen content. Analysis of electrical and physical data suggests that the observed enhancement of FTC may be caused by reduction of the oxygen content in the high-k film due to O scavenging process induced by the HfSix metal electrode. A hypothesis correlating O scavenging from the high-k dielectric to O vacancy formation, which contributes to FTC, is proposed
Engineered Materials, Dielectrics And Plasmas
High-k Dielectric Thin Films
Fast Transient Charge-trapping Effects
High-k Gate Dielectrics
Fast Transient Charging
O Vacancy Formation
Components, Circuits, Devices And Systems