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A Novel Bias Temperature Instability Characterization Methodology for High-$k$nMOSFETs
2006 / IEEE
This item was taken from the IEEE Periodical ' A Novel Bias Temperature Instability Characterization Methodology for High-$k$nMOSFETs ' The power law dependence of the threshold voltage shift (DeltaV th) on stress time for high-k nMOSFETs is studied using a single-pulse Id-Vg technique. The power law exponent value is found to be strongly affected by fast transient charge detrapping during the stress interruption time, which may result in an inaccurate lifetime prediction. A new analysis method that eliminates the impact of the stress interruption time is proposed to evaluate bias temperature instability in n-type high-k devices
Bias Temperature Instability
Threshold Voltage Shift
Stress Interruption Time
High K Dielectric Materials
High-k Gate Dielectrics
Semiconductor Device Models
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas
Fast Transient Charge Detrapping