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A Novel Bias Temperature Instability Characterization Methodology for High-$k$nMOSFETs

By: Young, C.D.; Rino Choi; Heh, D.; Bersuker, G.; Byoung Hun Lee;

2006 / IEEE

Description

This item was taken from the IEEE Periodical ' A Novel Bias Temperature Instability Characterization Methodology for High-$k$nMOSFETs ' The power law dependence of the threshold voltage shift (DeltaV th) on stress time for high-k nMOSFETs is studied using a single-pulse Id-Vg technique. The power law exponent value is found to be strongly affected by fast transient charge detrapping during the stress interruption time, which may result in an inaccurate lifetime prediction. A new analysis method that eliminates the impact of the stress interruption time is proposed to evaluate bias temperature instability in n-type high-k devices