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Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO/sub 2/ gated nMOSFETs

By: Hokyung Park; Hyunsang Hwang; Lee, J.C.; Bersuker, G.; Young, C.D.; Man Chang; Seung-Chul Song; Byoung Hun Lee; Rino Choi;

2006 / IEEE

Description

This item was taken from the IEEE Periodical ' Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO/sub 2/ gated nMOSFETs ' To understand the intrinsic effect of a hot-carrier injection on high-kappa dielectrics free from concurrent cold-carrier trapping, the authors have investigated a hot-carrier-induced damage with channel hot-carrier stresses and substrate hot-carrier stress. Compared to substrate hot-carrier stress, the channel hot-carrier stress shows a more significant cold-carrier-injection effect. By using a detrapping bias, they were able to decouple the effect of cold-carrier trapping from the permanent trap generation induced by the hot-carrier injection. As channel hot-carrier stress bias was reduced, a portion of cold-carrier trapping increased and a portion of interface trap generation decreased