Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Special reliability features for Hf-based high-/spl kappa/ gate dielectrics
2005 / IEEE
This item was taken from the IEEE Periodical ' Special reliability features for Hf-based high-/spl kappa/ gate dielectrics ' Several special reliability features for Hf-based high-/spl kappa/ gate dielectrics are highlighted, including: 1) trapping-induced threshold voltage (V/sub th/) shift is much more of a concern than TDDB in determining the operating lifetime; 2) n-channel MOSFETs (nMOSFETs) are more vulnerable than p-channel MOSFETs (pMOSFETs); and 3) MOSFETs with polySi gates are more vulnerable than those with metal gates. These will be discussed in the context of existing electron/hole traps and trap generation by high-field stress. A novel technique to probe traps in ultrathin gate dielectrics, inelastic electron tunneling spectroscopy (IETS), will be shown to be capable of revealing the energies and locations of traps in high-/spl kappa/ gate dielectrics.
High-k Gate Dielectrics
Trapping-induced Threshold Voltage Shift
Ultrathin Gate Dielectrics
Electrochemical Impedance Spectroscopy
Metal Gates Versus Poly Si Gates
Inelastic Electron Tunneling Spectroscopy
Semiconductor Device Reliability
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas