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Validity of constant voltage stress based reliability assessment of high-/spl kappa/ devices
By: Rino Choi; Byoung Hun Lee; Bersuker, G.; Brown, G.A.; Peterson, J.J.; Krishnan, S.A.; Sim, J.H.;
2005 / IEEE
This item was taken from the IEEE Periodical ' Validity of constant voltage stress based reliability assessment of high-/spl kappa/ devices ' Charge trapping in high-/spl kappa/ gate dielectrics affects the result of electrical characterization significantly. DC mobility degradation and device threshold voltage instability and C-V and I-V hysteresis are a few examples. The charging effects in high-/spl kappa/ gate dielectric also affect the validity of conventional reliability test methodologies developed for SiO/sub 2/ devices. In this paper, we review high-/spl kappa/ materials specific phenomena that can affect the validity of constant-voltage-stress-based reliability test methods to address the direction of future reliability study on high-/spl kappa/ devices.
Constant Voltage Stress
High-k Gate Dielectrics
Dc Mobility Degradation
Bias Temperature Instability
Time-dependent Dielectric Breakdown
Hot Carrier Injection
Time-dependent Dielectric Breakdown (tddb)
Bias Temperature Instability (bti)
Hot-carrier Injection (hci)
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas
Device Threshold Voltage Instability