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Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric

By: Manhong Zhang; Krishnan, S.A.; Chang Yong Kang; Akbar, M.S.; Chang Hwan Choi; Hyoung-Sub Kim; Se Jong Rhee; Feng Zhu; Lee, J.C.; Ok, I.; Tackwhi Lee;

2005 / IEEE

Description

This item was taken from the IEEE Periodical ' Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric ' A stacked Y/sub 2/O/sub 3//HfO/sub 2/ multimetal gate dielectric with improved electron mobility and charge trapping characteristics is reported. Laminated hafnium and yttrium were sputtered on silicon followed by post-deposition anneal (PDA) in N/sub 2/ ambient. The new dielectric shows a similar scalability to HfO/sub 2/ reference. Analysis on flatband voltage shift indicates positive fixed charge induced by Y/sub 2/O/sub 3/. Excellent transistor characteristics have been demonstrated. Stacked Y/sub 2/O/sub 3//HfO/sub 2/, compared to HfO/sub 2/ reference with similar equivalent oxide thickness (EOT), shows 49% enhancement in transconductance and 65% increase in the peak electron mobility. These improvements may be attributed to better charge trapping characteristics of the multimetal dielectric.