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Intrinsic mobility evaluation of high-/spl kappa/ gate dielectric transistors using pulsed I/sub d/-V/sub g/

By: Young, C.D.; Hauser, J.R.; Byoung Hun Lee; Bersuker, G.; Brown, G.A.; Zeitzoff, P.;

2005 / IEEE

Description

This item was taken from the IEEE Periodical ' Intrinsic mobility evaluation of high-/spl kappa/ gate dielectric transistors using pulsed I/sub d/-V/sub g/ ' A novel intrinsic mobility extraction methodology for high-/spl kappa/ gate stacks that only requires a capacitance-voltage and pulsed I/sub d/-V/sub g/ measurement is demonstrated on SiO/sub 2/ and high-/spl kappa/ gate dielectric transistors and is benchmarked to other reported mobility extraction techniques. Fast transient charging effects in high-/spl kappa/ gate stacks are shown to cause the mobility extracted using conventional dc-based techniques to be lower than the intrinsic mobility.