Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Intrinsic mobility evaluation of high-/spl kappa/ gate dielectric transistors using pulsed I/sub d/-V/sub g/
2005 / IEEE
This item was taken from the IEEE Periodical ' Intrinsic mobility evaluation of high-/spl kappa/ gate dielectric transistors using pulsed I/sub d/-V/sub g/ ' A novel intrinsic mobility extraction methodology for high-/spl kappa/ gate stacks that only requires a capacitance-voltage and pulsed I/sub d/-V/sub g/ measurement is demonstrated on SiO/sub 2/ and high-/spl kappa/ gate dielectric transistors and is benchmarked to other reported mobility extraction techniques. Fast transient charging effects in high-/spl kappa/ gate stacks are shown to cause the mobility extracted using conventional dc-based techniques to be lower than the intrinsic mobility.
Hfsi/sub X/o/sub Y/
Intrinsic Mobility Extraction Methodology
High-k Gate Stacks
Fast Transient Charging Effects
Pulsed I/sub D/-v/sub G/ Measurement
Pulsed Current–voltage (
Dielectric Thin Films
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas