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Charge trapping and detrapping characteristics in hafnium silicate gate stack under static and dynamic stress

By: Rino Choi; Bersuker, G.; Byoung Hun Lee; Lee, J.C.; Se Jong Rhee;

2005 / IEEE

Description

This item was taken from the IEEE Periodical ' Charge trapping and detrapping characteristics in hafnium silicate gate stack under static and dynamic stress ' The V/sub th/ instability of nMOSFET with HfSiON gate dielectric under various stress conditions has been evaluated. It is shown that after constant voltage stress, the threshold voltage (V/sub th/) relaxes to its initial prestress value. The relaxation rate is strongly affected by the stress duration and magnitude rather than injected charge flux or magnitude of the V/sub th/ shift. It is proposed that spatial distribution of trapped charges, which is strongly affected by the stress conditions, determines the relaxation rate. The implications of the electron trapping/detrapping processes on electrical evaluation of the high-/spl kappa/ gate dielectrics are discussed.