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Characterization of active pixel sensors in 0.25 /spl mu/m CMOS technology

By: Tyndel, M.; Turchetta, R.; Evans, A.; Casse, G.; Allport, P.P.; Velthuis, J.J.; Villani, G.;

2005 / IEEE

Description

This item was taken from the IEEE Periodical ' Characterization of active pixel sensors in 0.25 /spl mu/m CMOS technology ' We are developing CMOS monolithic active pixel sensors for high energy physics applications. We have successfully produced three test structures. They feature several different pixel types including a Flexible APS (FAPS). The FAPS has a 10 deep pipeline in each pixel. This is specifically designed with the beam structure of the TESLA proposal for the Linear Collider in mind. Here results demonstrating that the standard active pixel devices are still operating well after a fluence of 10/sup 14/ p/cm/sup 2/ will be reported. Furthermore, the response of the FAPS to minimum ionizing particles (MIPs) from a /sup 106/Ru /spl beta/-source are presented. The obtained S/N ratio for the 10 cells of the FAPS varies between 15 and 17.