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Simulation of a novel, radiation-resistant active pixel sensor in a standard 0.25 /spl mu/m CMOS technology

By: Allport, P.P.; Villani, E.G.; Velthuis, J.J.; Turchetta, R.; Tyndel, M.; Evans, A.; Casse, G.;

2005 / IEEE

Description

This item was taken from the IEEE Periodical ' Simulation of a novel, radiation-resistant active pixel sensor in a standard 0.25 /spl mu/m CMOS technology ' CMOS monolithic active pixel sensors are currently developed for particle physics vertex detectors. Their radiation resistance has already been proved to be high enough for the devices to be used at machines like the linear collider, where the radiation fluence is expected to be of the order of 10/sup 12/ proton/cm/sup 2/. However, in order to address more radiation-harsh environments, we proposed a novel sensor structure based on the deep n-well, which is found in triple-well CMOS technologies. Potential benefits arising from this technology are investigated and simulation results for standard and novel structures compared.