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Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

By: Goto, Y.; Mine, T.; Hiraiwa, A.; Ashihara, H.; Shima, A.;

2005 / IEEE

Description

This item was taken from the IEEE Periodical ' Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs ' We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The V/sub th/ rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.