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Work function tuning of fully silicided NiSi metal gates using a TiN capping layer
By: Kwong, D.L.; Lu, J.P.; Wen, H.C.; Sim, J.H.;
2004 / IEEE
This item was taken from the IEEE Periodical ' Work function tuning of fully silicided NiSi metal gates using a TiN capping layer ' This paper investigates a new way of tuning the work function of fully silicided (FUSI) NiSi metal gates for dual-gate CMOS using a TiN capping layer on Ni to control the poly-Si dopant distribution during FUSI formation. In addition, by comparing the work function change of NiSi FUSI with and without TiN capping, we provide clear evidence that dopants at the gate electrode and dielectric interface are responsible for the work function change. The TiN capping layer causes no degradation to the underlying gate dielectric in terms of fixed-oxide charge, gate leakage current, and time-dependent dielectric breakdown characteristics.
Integrated Circuit Metallisation
Work Function Tuning
Fully Silicided Nisi Metal Gates
Tin Capping Layer
Gate Leakage Current
Time-dependent Dielectric Breakdown
Cmos Integrated Circuits
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas