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A capacitance-based methodology for work function extraction of metals on high-/spl kappa/
2004 / IEEE
This item was taken from the IEEE Periodical ' A capacitance-based methodology for work function extraction of metals on high-/spl kappa/ ' This letter presents a methodology to accurately extract the work function of metal electrodes on high-/spl kappa/ dielectrics with various charge distributions. A mathematical analysis including sources of errors was used to study the effect of charge distribution in gate dielectric stacks on the flatband voltage of the device. The calculations are verified by experimental results obtained for Ru-Ta alloys on HfO/sub 2/ and SiO/sub 2/ gate dielectric stacks. It is shown that accounting for the appropriate charge model is imperative for accurate calculation of workfunction on high-/spl kappa//SiO/sub 2/ gate dielectric stacks.
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems
Work Function Extraction
High-/spl Kappa/ Dielectrics
Gate Dielectric Stacks