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Low-temperature deposition of hafnium silicate gate dielectrics

By: Gnade, B.E.; Quevedo-Lopez, M.A.; Pant, G.; Punchaipetch, P.; Yao, C.; Wallace, R.M.; Kim, M.J.; El-Bouanani, M.;

2004 / IEEE

Description

This item was taken from the IEEE Periodical ' Low-temperature deposition of hafnium silicate gate dielectrics ' The physical and electrical properties of hafnium silicate (HfSi/sub x/O/sub y/) films produced by low-temperature processing conditions (/spl les/150/spl deg/C) suitable for flexible display applications were studied using sputter deposition and ultra-violet generated ozone treatments. Films with no detectable low-/spl kappa/ interfacial layer were produced. Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy were used to determine the composition, chemical bonding environment, thickness, and film interface. The electrical behavior of the as-deposited and annealed hafnium silicate films were determined by current-voltage (I--V) and capacitance-voltage (C--V) measurements.