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A poly-silicon TFT with a sub-5-nm thick channel for low-power gain cell memory in mobile applications

By: Atwood, B.; Sano, T.; Mine, T.; Osabe, T.; Ishii, T.; Yano, K.;

2004 / IEEE

Description

This item was taken from the IEEE Periodical ' A poly-silicon TFT with a sub-5-nm thick channel for low-power gain cell memory in mobile applications ' This work presents a gain-cell solution in which a novel ultrathin polysilicon film transistor provides the basis for dense and low-power embedded random-access memory (RAM). This is made possible by the new transistor's 2-nm-thick channel, which realizes a quantum-confinement effect that produces a low leakage current value of only 10/sup -19/ A at room temperature. The memory has the potential to solve the power and stability problems that static RAM (SRAM) is going to face in the very near future.