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The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode
By: Chang Seok Kang; Young-Hee Kim; Rino Choi; Hag-Ju Cho; Chang Yong Kang; Lee, J.C.; Akbar, M.S.; Changhwan Choi; Se Jong Rhee;
2004 / IEEE
This item was taken from the IEEE Periodical ' The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode ' Electrical and material characteristics of hafnium oxynitride (HfON) gate dielectrics have been studied in comparison with HfO/sub 2/. HfON was prepared by a deposition of HfN followed by post-deposition-anneal (PDA). By secondary ion mass spectroscopy (SIMS), incorporated nitrogen in the HfON was found to pile up at the dielectric/Si interface layer. Based on the SIMS profile, the interfacial layer (IL) composition of the HfON films appeared to be like hafnium-silicon-oxynitride (HfSiON) while the IL of the HfO/sub 2/ films seemed to be hafnium-silicate (HfSiO). HfON showed an increase of 300/spl deg/C in crystallization temperature compared to HfO/sub 2/. Dielectric constants of bulk and interface layer of HfON were 21 and 14, respectively. The dielectric constant of interfacial layer in HfON (/spl sim/14) is larger than that of HfO/sub 2/ (/spl sim/7.8). HfON dielectrics exhibit /spl sim/10/spl times/ lower leakage current (J) than HfO/sub 2/ for the same EOTs before post-metal anneal (PMA), while /spl sim/40/spl times/ lower J after PMA. The improved electrical properties of HfON over HfO/sub 2/ can be explained by the thicker physical thickness of HfON for the same equivalent oxide thickness (EOT) due to its higher dielectric constant as well as a more stable interface layer. Capacitance hysteresis (/spl Delta/V) of HfON capacitor was found to be slightly larger than that of HfO/sub 2/. Without high temperature forming gas anneal, nMOSFET with HfON gate dielectric showed a peak mobility of 71 cm/sup 2//Vsec. By high temperature forming gas anneal at 600/spl deg/C, mobility improved up to 256 cm/sup 2//Vsec.
Laser Beam Annealing
Hafnium Oxynitride Gate Dielectrics
Hfon Gate Dielectrics
Dielectric/si Interface Layer
Interfacial Layer Composition
Equivalent Oxide Thickness
High Temperature Forming Gas Anneal
Charge Carrier Mobility
Secondary Ion Mass Spectra
Dielectric Thin Films
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems
Secondary Ion Mass Spectroscopy