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Source-gated thin-film transistors

By: Shannon, J.M.; Gerstner, E.G.;

2003 / IEEE


This item was taken from the IEEE Periodical ' Source-gated thin-film transistors ' The thin-film transistor is one of a family of field-effect transistors. They all operate in the same way: a gate modulates the conductance of a channel and the current saturates when the drain end is depleted of carriers. The authors introduce a source-gated transistor that overcomes some of the fundamental limitations of the field-effect transistor. The gate controls the supply of carriers and the current saturates when the source is depleted of carriers. The result is a thin-film transistor that can operate at lower voltages with larger gains and lower power dissipation. It should also preserve its characteristics with smaller dimensions.