Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Performance of polysilicon gate HfO2 MOSFETs on  and  silicon substrates
By: Chang Seok Kang; Onishi, K.; Lee, J.C.; Akbar, M.S.; Krishnan, S.; Young Hee Kim; Hag-Ju Cho; Rino Choi;
2003 / IEEE
This item was taken from the IEEE Periodical ' Performance of polysilicon gate HfO2 MOSFETs on  and  silicon substrates ' Mobility dependence on Si substrate orientations was investigated for HfO/sub 2/ MOSFETs for the first time. High-temperature (600 /spl deg/C) forming gas (FG) annealing (HT-FGA) was applied on the devices on both  and  substrates to evaluate the mobility for optimal interfacial quality. Using HT-FGA, D/sub it/ of the  devices was reduced down below 1 /spl times/ 10/sup 12/ cm/sup -2/V/sup -1/. Similar to SiO/sub 2/ devices, NMOS mobility of the  devices was lower than that of the  devices at higher effective fields, while it was reversed for PMOSFETs.
High-temperature Forming Gas Annealing
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas