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Performance of polysilicon gate HfO2 MOSFETs on [100] and [111] silicon substrates

By: Chang Seok Kang; Onishi, K.; Lee, J.C.; Akbar, M.S.; Krishnan, S.; Young Hee Kim; Hag-Ju Cho; Rino Choi;

2003 / IEEE

Description

This item was taken from the IEEE Periodical ' Performance of polysilicon gate HfO2 MOSFETs on [100] and [111] silicon substrates ' Mobility dependence on Si substrate orientations was investigated for HfO/sub 2/ MOSFETs for the first time. High-temperature (600 /spl deg/C) forming gas (FG) annealing (HT-FGA) was applied on the devices on both [100] and [111] substrates to evaluate the mobility for optimal interfacial quality. Using HT-FGA, D/sub it/ of the [111] devices was reduced down below 1 /spl times/ 10/sup 12/ cm/sup -2/V/sup -1/. Similar to SiO/sub 2/ devices, NMOS mobility of the [111] devices was lower than that of the [100] devices at higher effective fields, while it was reversed for PMOSFETs.