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Thickness dependence of Weibull slopes of HfO2 gate dielectrics
By: Rino Choi; Onishi, K.; Hag-Ju Cho; Chang Seok Kang; Krishnan, S.; Young Hee Kim; Lee, J.C.; Akbar, M.S.;
2003 / IEEE
This item was taken from the IEEE Periodical ' Thickness dependence of Weibull slopes of HfO2 gate dielectrics ' Breakdown voltage distribution, Weibull slopes, and area scaling factors have been investigated for HfO/sub 2/ gate dielectrics in order to gain a better understanding of the breakdown mechanism. Weibull slope of thick HfO/sub 2/ (e.g., /spl beta//spl ap/4 for EOT=2.5 nm) is smaller than that of SiO/sub 2/ with similar physical thickness, whereas /spl beta/ of the thinner HfO/sub 2/ (e.g., /spl beta//spl ap/2 for EOT=1.4 nm) is similar to that of SiO/sub 2/. The implication of the thickness dependence of /spl beta/ is discussed.
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Hfo/sub 2/ Gate Dielectrics
Breakdown Voltage Distribution
Area Scaling Factors
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High-k Gate Dielectrics
Semiconductor Device Reliability
Dielectric Thin Films
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas