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Compensated back-channel TFTs in hydrogenated amorphous silicon
By: Shannon, J.M.; Gerstner, E.G.;
2003 / IEEE
Description
This item was taken from the IEEE Periodical ' Compensated back-channel TFTs in hydrogenated amorphous silicon ' Compensated back-channel inverted staggered TFTs have been made in a-Si:H. Donor impurities were implanted to form a good source and drain ohmic contact followed by an acceptor implant to compensate the channel region. TFTs have been made with no degradation of channel mobility due to the implants and a leakage current between source and drain comparable with the best TFTs made using conventional etched back-channel technology.
Related Topics
Semiconductor Device Measurement
Silicon
Hydrogen
Thin Film Transistors
Ion Implantation
Compensation
Ohmic Contacts
Carrier Mobility
Leakage Currents
Elemental Semiconductors
Amorphous Semiconductors
Si:h
Donor Impurity Implantation
Source Ohmic Contact
Drain Ohmic Contact
Acceptor Implant
Channel Region Compensation
Channel Mobility
Source-drain Leakage Current
Amorphous Silicon
Thin Film Transistors
Impurities
Etching
Implants
Fets
Ion Implantation
Annealing
Ohmic Contacts
Degradation
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas
Engineering
A-si:h Compensated Back-channel Inverted Staggered Tfts
