Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Area dependence of TDDB characteristics for HfO2 gate dielectrics
By: Nieh, R.; Young Hee Kim; Hag-Ju Cho; Chang Seok Kang; Onishi, K.; Gopalan, S.; Lee, J.C.; Krishnan, S.; Jeong Han; Choi, R.;
2002 / IEEE
This item was taken from the IEEE Periodical ' Area dependence of TDDB characteristics for HfO2 gate dielectrics ' Weibull slopes, area scaling factors, and lifetime projection have been investigated for both soft breakdown and hard breakdown for the first time, in order to gain a better understanding of, the breakdown mechanism of HfO/sub 2/ gate dielectrics. The Weibull slope /spl beta/ of the hard breakdown for both the area dependence and the time-to-dielectric-breakdown distribution was found to be /spl beta/ = 2, whereas that of the soft breakdown was about 1.4. Estimated ten-year lifetime has been projected to be -2 V.
Hfo/sub 2/ Gate Dielectrics
Area Scaling Factors
Reactive Dc Magnetron Sputtering
4.8 To 5 Nm
Semiconductor Device Breakdown
Semiconductor Device Reliability
Dielectric Thin Films
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas