Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs
2002 / IEEE
This item was taken from the IEEE Periodical ' Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs ' The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of body thickness scaling and channel crystallographic orientation are studied. The impact of threshold voltage control solutions, including doped channel and asymmetric double-gate structures is also investigated. Future gate dielectric thickness scaling and the use of high-/spl kappa/ gate dielectrics are discussed.
Dielectric Thin Films
High-k Gate Dielectrics
Direct-tunneling Gate Leakage Current
Gate Tunneling Current
Vertical Electric Field Reduction
Channel Quantum Confinement
Body Thickness Scaling
Channel Crystallographic Orientation
Threshold Voltage Control
Doped Channel Structures
Asymmetric Double-gate Structures
Gate Dielectric Thickness Scaling
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems
Ultrathin Body Mosfets