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Formation of bulk unipolar diodes in hydrogenated amorphous silicon by ion implantation
2001 / IEEE
This item was taken from the IEEE Periodical ' Formation of bulk unipolar diodes in hydrogenated amorphous silicon by ion implantation ' Bulk unipolar diodes with a wide range of barrier heights have been made in hydrogenated amorphous silicon by ion implantation. The precise concentration of dopant atoms that can be obtained when implanting into an amorphous substrate leads to accurate barrier height control. Compared with the alternative unipolar device, the Schottky diode, these devices should provide uniform, high barrier diodes for photodetectors, and very low barrier diodes for low-power, unbiased, mixers and detectors.
Semiconductor Device Measurement
A-si:h Bulk Unipolar Diodes
Barrier Height Range
Barrier Height Control
Very Low Barrier Diodes
Low-power Unbiased Mixers
Low-power Unbiased Detectors
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas
Dopant Atom Concentration