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Effect of H2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO2
By: Watt, V.H.C.; Al-Shareef, H.N.; Brown, G.A.; Laughery, M.; Karamcheti, A.; Luo, T.Y.; Huff, H.R.; Jackson, M.D.;
2000 / IEEE
This item was taken from the IEEE Periodical ' Effect of H2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO2 ' This letter demonstrates the effect of H/sub 2/ percentage during oxidation on the quality of the in-situ steam generated (ISSG) oxide. Our results indicate the reliability of ISSG oxide is considerably improved as the H/sub 2/ percentage increases, from the viewpoint of stress-induced leakage current (SILC) and charge-to-breakdown (Q/sub BD/). Such enhanced reliability of the ISSG oxide may be explained by the reduction of defects in the SiO/sub 2/ network within the structural transition layer, such as Si dangling bonds, weak Si-Si and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.
O/sub 2/-h/sub 2/
Ultrathin In-situ Steam Generated Sio/sub 2/
H/sub 2/ Content
H/sub 2/ Percentage
Stress-induced Leakage Current
Sio/sub 2/ Network Defect Reduction
Structural Transition Layer
Si Dangling Bonds
Weak Si-si Bonds
Strained Si-o Bonds
Molecular Oxygen Dissociation
Atomic Layer Deposition
Semiconductor Device Reliability
Dielectric Thin Films
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas