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Self-aligned CoSi/sub 2/ for 0.18 /spl mu/m and below
1999 / IEEE
This item was taken from the IEEE Periodical ' Self-aligned CoSi/sub 2/ for 0.18 /spl mu/m and below ' CoSi/sub 2/ is being used commonly for the advanced IC technologies. There are several process choices to be made for the formation of a high yielding and reproducible silicide. In this paper the various CoSi/sub 2/ technologies are discussed. The scalability of the process of record, the Co/Ti(cap) process are presented for 0.18 /spl mu/m and below.
High Yielding Silicide
Cosi/sub 2/ Technologies
Co/ti Cap Process
Cosi/sub 2/ Formation Process
Ti Capping Layer
Self-aligned Cosi/sub 2/
Integrated Circuit Metallisation
Integrated Circuit Manufacture
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems