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High collection efficiency CVD diamond alpha detectors

By: McKeag, R.D.; Brambilla, A.; Jany, C.; Marshall, R.D.; Foulon, F.; Bergonzo, P.; Jackman, R.B.;

1998 / IEEE


This item was taken from the IEEE Periodical ' High collection efficiency CVD diamond alpha detectors ' Advances in Chemical Vapour Deposited (CVD) diamond have enabled the routine use of this material for sensor device fabrication, allowing exploitation of its unique combination of physical properties (low temperature susceptibility (>500/spl deg/C), high resistance to radiation damage (>100 Mrad) and to corrosive media). A consequence of CVD diamond growth on silicon is the formation of polycrystalline films which has a profound influence on the physical and electronic properties with respect to those measured on monocrystalline diamond. We report the optimisation of physical and geometrical device parameters for radiation detection in the counting mode. Sandwich and co-planar electrode geometries are tested and their performances evaluated with regard to the nature of the field profile and drift distances inherent in such devices. The carrier drift length before trapping was measured under alpha particles and values as high as 40% of the overall film thickness are reported. Further, by optimising the device geometry, we show that a gain in collection efficiency, defined as the induced charge divided by the deposited charge within the material, can be achieved even though lower bias values are used.