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High performance of silicided silicon-sidewall source and drain (S/sup 4/D) structure
By: Iwai, H.; Katsumata, Y.; Morimoto, T.; Morifuji, E.; Yoshitomi, T.; One, M.; Ohguro, T.; Saito, M.; Momose, H.S.;
1998 / IEEE
This item was taken from the IEEE Periodical ' High performance of silicided silicon-sidewall source and drain (S/sup 4/D) structure ' A silicided silicon-sidewall source and drain (S/sup 4/D) structure is proposed for sub-0.1-/spl mu/m devices. The merit of the S/sup 4/D structure is that the series resistance of the source and drain is significantly reduced since the silicide layer is attached very close to the gate electrode and the silicon sidewall can be doped very highly. Thus, very high drain current drive can be expected, Another advantage of this structure is that the source and drain extensions are produced by the solid-phase diffusion of boron from the highly doped silicon-sidewall. Thus, shallow extensions with very high doping can be realized. A 75-nm gate length pMOSFET fabricated with this structure is shown to exhibit excellent electrical characteristics.
Drain Current Drive
Silicided Silicon-sidewall Source And Drain Structure
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems
S/sup 4/d Structure