Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Thermally robust Ta/sub 2/O/sub 5/ capacitor for the 256-Mbit DRAM

By: Chang-Seok Kang; Kee-Won Kwon; Sung Tae Ahn; Ho-Kyu Kang; Soon Oh Park;

1996 / IEEE

Description

This item was taken from the IEEE Periodical ' Thermally robust Ta/sub 2/O/sub 5/ capacitor for the 256-Mbit DRAM ' The thermal degradation of the Ta/sub 2/ O/sub 5/ capacitor during BPSG reflow has been studied. The cause of deterioration of Ta/sub 2/O/sub 5/ with the TiN top electrode was found to be the oxidation of TiN. By placing a poly-Si layer between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850/spl deg/C. The Ta/sub 2/O/sub 5/ capacitor with the TiN/poly-Si top electrode was integrated into 256-Mbit DRAM cells and excellent leakage current characteristics were obtained.