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Experimental high performance sub-0.1 /spl mu/m channel nMOSFET's

By: Jenkins, K.A.; Lee, K.; Lii, T.; Kern, D.; Taur, Y.; Rishton, S.; Quinlan, D.; Polcari, M.; Sewell, F.; Mii, Y.; Danner, D.; Brown, T., Jr.;

1994 / IEEE


This item was taken from the IEEE Periodical ' Experimental high performance sub-0.1 /spl mu/m channel nMOSFET's ' Very high performance sub-0.1 /spl mu/m channel nMOSFET's are fabricated with 35 /spl Aring/ gate oxide and shallow source-drain extensions. An 8.8-ps/stage delay at V/sub dd/=1.5 V is recorded from a 0.08 /spl mu/m channel nMOS ring oscillator at 85 K. The room temperature delay is 11.3 ps/stage. These are the fastest switching speeds reported to date for any silicon devices at these temperatures. Cutoff frequencies (f/sub T/) of a 0.08 /spl mu/m channel device are 93 GHz at 300 K, and 119 GHz at 85 K, respectively. Record saturation transconductances, 740 mS/mm at 300 K and 1040 mS/mm at 85 K, are obtained from a 0.05 /spl mu/m channel device. Good subthreshold characteristics are achieved for 0.09 /spl mu/m channel devices with a source-drain halo process.<>