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Short-channel-effect free 0.18 /spl mu/m MOSFET by temperature-dimension combination scaling theory: design and experiment

By: Tsubouchi, K.; Masu, K.; Sasaki, K.; Hidaka, T.; Yokoyama, M.;

1994 / IEEE

Description

This item was taken from the IEEE Periodical ' Short-channel-effect free 0.18 /spl mu/m MOSFET by temperature-dimension combination scaling theory: design and experiment ' We have fabricated 77 K deep-submicron MOSFETs on the basis of the temperature-dimension combination scaling theory (CST). The 77 K MOSFETs with 1-V supply voltage are designed from a 300 K MOSFET with 4-V supply voltage. The fabricated 77 K 0.18 /spl mu/m device has exhibited fully scaled characteristics. The subthreshold swing (S) and the threshold voltage (V/sub th/) of the 77 K device are found to be 1/4/spl ap/77 K/300 K of those of the 300 K device. Furthermore, S and V/sub th/ are achieved to be 27 mV/dec and 0.21 V without short-channel effect degradation.<>