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Design and characterization of the BVX: an 8-channel CMOS preamplifier-shaper for silicon strips
By: Britton, C.L., Jr.; Lockyer, N.; Sullivan, J.P.; Sondheim, W.; Simon-Gillo, J.; Jacak, B.V.; Simpson, M.L.; Collier, W.; Boissevain, J.; Zimmerman, T.; Yarema, R.J.; Wintenberg, A.L.; Alley, G.T.;
1994 / IEEE
This item was taken from the IEEE Periodical ' Design and characterization of the BVX: an 8-channel CMOS preamplifier-shaper for silicon strips ' This paper presents the design and characterization of an 8-channel preamplifier-shaper intended for use with silicon strip detectors ranging in capacitance from 1 to 20 pF. The nominal peaking time of the circuit is 200 ns with an adjustment range of /spl plusmn/50 ns. The circuit has a pitch (width) of 85 /spl mu/m/channel with a power dissipation of 1.2 mW/channel and has been fabricated in 2 /spl mu/m p-wells CMOS. The 0 pF noise is 330 e with a noise slope of 64 e/pF. The design approach is presented as well as both test bench and strip detector measurements.<
1 To 20 Pf
150 To 250 Ns
Si Strip Detectors
8-channel Cmos Preamplifier-shaper
Position Sensitive Particle Detectors
Cmos Integrated Circuits