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Comments, with reply, on 'Schottky contact effects in the sidegating effect of GaAs devices'

By: Dutton, R.W.; Yi Liu; Ayyar, S.G.; Deal, M.D.;

1992 / IEEE

Description

This item was taken from the IEEE Periodical ' Comments, with reply, on 'Schottky contact effects in the sidegating effect of GaAs devices' ' The commenter points out a discrepancy between the results in the above-titled paper (ibid., vol.13, p.149-51, 1992) and those of C.P. Lee et al. (ibid., vol. EDL-3, p.97-8, 1982). He emphasizes that trap-fill-limited (TFL) conduction and trap-impact ionization are important mechanisms causing high substrate leakage current and backgating effect of GaAs MESFETs. He suggests that the dependence of the backgating and leakage current threshold voltage V/sub BGT/ on the source-to-drain bias V/sub DS/ of the MESFET can be used to experimentally evaluate if the observed backgating effect and leakage current are caused by mechanisms related to n-i-n or Schottky-i-n structures. The authors, in reply, amplify on the commenter's remarks and explain the discrepancy.<>