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Schottky contact effects in the sidegating effect of GaAs devices
By: Liu, Y.; Deal, M.D.; Dutton, R.W.;
1992 / IEEE
Description
This item was taken from the IEEE Periodical ' Schottky contact effects in the sidegating effect of GaAs devices ' The sidegating effect measurements on ungated FETs verify that the Schottky contact on undoped substrates causes serious current reduction in GaAs devices and high leakage current in the semi-insulating GaAs. By realizing the fact that current in Schottky-i-n structures can be high and taking this effect into account, the observed abrupt changes and S-shaped characteristics of the drain and sidegate currents can be explained to be the consequence of the transition of the substrate current from the n-i-n current to the Schottky-i-n current.<
Related Topics
Gallium Arsenide
Iii-v Semiconductors
Leakage Currents
Schottky Effect
Schottky Gate Field Effect Transistors
Gaas Devices
Mesfet
Drain Current
Schottky Contact Effects
Sidegating Effect
Ungated Fets
Current Reduction
High Leakage Current
S-shaped Characteristics
Sidegate Currents
Substrate Current
N-i-n Current
Schottky-i-n Current
Schottky Barriers
Gallium Arsenide
Voltage
Fets
Substrates
Mesfets
Current Measurement
Leakage Current
Testing
Gold
Semiconductor Device Testing
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas
Engineering
Undoped Substrates
