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Schottky contact effects in the sidegating effect of GaAs devices
By: Liu, Y.; Deal, M.D.; Dutton, R.W.;
1992 / IEEE
This item was taken from the IEEE Periodical ' Schottky contact effects in the sidegating effect of GaAs devices ' The sidegating effect measurements on ungated FETs verify that the Schottky contact on undoped substrates causes serious current reduction in GaAs devices and high leakage current in the semi-insulating GaAs. By realizing the fact that current in Schottky-i-n structures can be high and taking this effect into account, the observed abrupt changes and S-shaped characteristics of the drain and sidegate currents can be explained to be the consequence of the transition of the substrate current from the n-i-n current to the Schottky-i-n current.<
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