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Quantum phenomena in field-effect-controlled semiconductor nanostructures

By: Orlando, T.P.; Bagwell, P.F.; Ismail, K.E.; Smith, H.I.; Antoniadis, D.A.;

1991 / IEEE


This item was taken from the IEEE Periodical ' Quantum phenomena in field-effect-controlled semiconductor nanostructures ' Quantum effects resulting from sub-100 nm features in planar, field-effect-controlled semiconductor structures or devices are discussed, and experimental results are compared with calculations. These devices are based on the GaAs-AlGaAs modulation-doped field-effect transistor (MODFET) and include grating-gate lateral surface superlattices. (LSSLs), grid-gate LSSLs, planar-resonant-tunneling field-effect transistors (PRESTFETs), multiple parallel quantum wires (MPQWs), and arrays of quantum dots (QDs). In contrast to conventional, epitaxially grown vertical quantum structures, planar structures offer the opportunity for electron confinement in three, two, and one dimensions and the flexibility of electrical tuning of quantum effects.<>