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Quantum phenomena in field-effect-controlled semiconductor nanostructures
1991 / IEEE
This item was taken from the IEEE Periodical ' Quantum phenomena in field-effect-controlled semiconductor nanostructures ' Quantum effects resulting from sub-100 nm features in planar, field-effect-controlled semiconductor structures or devices are discussed, and experimental results are compared with calculations. These devices are based on the GaAs-AlGaAs modulation-doped field-effect transistor (MODFET) and include grating-gate lateral surface superlattices. (LSSLs), grid-gate LSSLs, planar-resonant-tunneling field-effect transistors (PRESTFETs), multiple parallel quantum wires (MPQWs), and arrays of quantum dots (QDs). In contrast to conventional, epitaxially grown vertical quantum structures, planar structures offer the opportunity for electron confinement in three, two, and one dimensions and the flexibility of electrical tuning of quantum effects.<
Quantum Interference Devices
Resonant Tunnelling Devices
Semiconductor Device Models
Semiconductor Quantum Dots
Semiconductor Quantum Wires
Quantum Dot Array
Lateral Surface Superlattices.
Multiple Parallel Quantum Wires
High Electron Mobility Transistors
Field Effect Devices
General Topics For Engineers