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A 4-Mb low-temperature DRAM
By: Franch, R.L.; Mohler, R.L.; Wen, D.-S.; Henkels, W.H.; Dennard, R.H.; Bucelot, T.J.; Bronner, G.B.; Taur, Y.; Cote, W.J.; Bracchitta, J.A.; Long, C.W.;
1991 / IEEE
This item was taken from the IEEE Periodical ' A 4-Mb low-temperature DRAM ' The authors present the characterization of the first dynamic RAM (DRAM) fabricated in a technology specifically optimized for cryogenic operation. With the power supply adjusted to assure hot-electron reliability, the 25-ns 4-Mb low-temperature (LT) chips operated 3 times faster than conventional chips. The LT-optimized chips functioned properly with cycle times as fast as 45 ns, and with a toggle-mode data rate of 667 Mb/s. Wide operating margins and a very large process window for data retention were demonstrated. At a temperature of 85 K the storage retention time of the trench-capacitor memory cells exceeded 8 h. This study shows that the performance leverage offered by low temperature applies equally well to DRAM and to logic. There is no limitation inherent to memory.<
Trench-capacitor Memory Cells
Random Access Memory
Cmos Logic Circuits
Time Of Arrival Estimation
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems