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An experimental 1.5-V 64-Mb DRAM

By: Kawamoto, Y.; Murai, F.; Watanabe, Y.; Kume, E.; Takeuchi, K.; Tanaka, H.; Nakagome, Y.; Itoh, K.; Takeda, E.; Nishida, T.; Kaga, T.; Kisu, T.; Hisamoto, D.; Izawa, R.;

1991 / IEEE


This item was taken from the IEEE Periodical ' An experimental 1.5-V 64-Mb DRAM ' Low-voltage circuit technologies for higher-density dynamic RAMs (DRAMs) and their application to an experimental 64-Mb DRAM with a 1.5-V internal operating voltage are presented. A complementary current sensing scheme is proposed to reduce data transmission delay. A speed improvement of 20 ns was achieved when utilizing a 1.5-V power supply. An accurate and speed-enhanced half-V/sub CC/ voltage generator with a current-mirror amplifier and tri-state buffer is proposed. With it, a response time reduction of about 1.5 decades was realized. A word-line driver with a charge-pump circuit was developed to achieve a high boost ratio. A ratio of about 1.8 was obtained from a power supply voltage as low as 1.0 V. A 1.28 mu m/sup 2/ crown-shaped stacked-capacitor (CROWN) cell was also made to ensure a sufficient storage charge and to minimize data-line interference noise. An experimental 1.5 V 64 Mb DRAM was designed and fabricated with these technologies and 0.3 mu m electron-beam lithography. A typical access time of 70 ns was obtained, and a further reduction of 50 ns is expected based on simulation results. Thus, a high-speed performance, comparable to that of 16-Mb DRAMs, can be achieved with a typical power dissipation of 44 mW, one tenth that of 16-Mb DRAMs. This indicates that a low-voltage battery operation is a promising target for future DRAMs.<>