Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Sidegating effect of GaAs MESFETs and leakage current in a semi-insulating GaAs substrate
By: Deal, M.D.; Dutton, R.W.; Liu, Y.;
1990 / IEEE
This item was taken from the IEEE Periodical ' Sidegating effect of GaAs MESFETs and leakage current in a semi-insulating GaAs substrate ' A series of measurements were made on test structures to study the sidegating effect of GaAs MESFETs. The results show that the small portion of the gate of a MESFET that is in direct contact with the semi-insulating substrate plays an important role in causing the observed rapid rise of leakage current and in enhancing the sidegating effect.<
Schottky Gate Field Effect Transistors
Mesfet Test Structures
Semi-insulating Gaas Substrate
Semiconductor Device Testing
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas