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High-performance millimeter-wave ion-implanted GaAs MESFETs

By: Lau, C.L.; Feng, M.; Wang, G.W.; Lepkowski, T.R.; Ito, C.;

1989 / IEEE

Description

This item was taken from the IEEE Periodical ' High-performance millimeter-wave ion-implanted GaAs MESFETs ' GaAs MESFETs (metal-epitaxial-semiconductor-field-effect transistors) with ion-implanted active channels have been fabricated on 3-in-diameter GaAs substrates which demonstrate device performance comparable with that of AlGaAs/InGaAs pseudomorphic HEMT (high-electron-mobility transistor) devices. Implanted MESFETs with 0.5- mu m gate lengths exhibit an extrinsic transconductance of 350 mS/mm. From S-parameter measurements, a current-gain cutoff frequency f/sub 1/ of 48 GHz and a maximum-available-gain cutoff frequency f/sub max/ greater than 100 GHz are achieved. These results clearly demonstrate the suitability of ion-implanted MESFET technology for millimeter-wave discrete device, high-density digital, and monolithic microwave and millimeter-wave IC applications.<>