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Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz

By: Lau, C.L.; Ito, C.; Chang, Y.; Wang, G.W.; Lepkowski, T.R.; Feng, M.;

1989 / IEEE

Description

This item was taken from the IEEE Periodical ' Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz ' Ion-implanted GaAs MESFETs with half-micrometer gate length have been fabricated on 3-in-diameter GaAs substrates. At 16 GHz, a minimum noise figure of 0.8 dB with an associated gain of 6.3 dB has been measured. This noise figure is believed to be the lowest ever reported for 0.5- and 0.25- mu m ion-implanted MESFETs, and is comparable to that for 0.25- mu m HEMTs at this frequency. By using the Fukui equation and the fitted equivalent circuit model, a K/sub f/ factor of 1.4 has been obtained. These results clearly demonstrate the potential of ion-implanted MESFET technology for K-band low-noise integrated circuit applications.<>