Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Hot-electron damage-resistant Si-gate submicrometer MOSFETs with a fluorinated oxide

By: Ma, T.P.; Mukai, K.; Ohyu, K.; Ohji, Y.; Nishioka, Y.;

1989 / IEEE

Description

This item was taken from the IEEE Periodical ' Hot-electron damage-resistant Si-gate submicrometer MOSFETs with a fluorinated oxide ' Summary form only given. It has been reported previously (see E.F. da Silva, Jr. et al., 1987) that, by introducing minute amounts of fluorine in thermal SiO/sub 2/, the reliability of MOS capacitors can be significantly improved. The authors present a new technique to incorporate fluorine into the gate oxide, and the subsequent improvement of the resistance to hot-electron damage of the resulting micrometer-size and submicrometer MOSFETs. This technique utilizes low energy F implantation onto the surface of the polysilicon gate electrode, followed by annealing at 950 degrees C to diffuse F into the gate SiO/sub 2/ toward the SiO/sub 2//Si interface. The MOSFETs investigated covered a wide range of gate lengths (0.6-10 mu m on mask; 0.2-9.6 mu m after processing) and widths (0.8-10 mu m on mask; 0.2-9.4 mu m after processing). Among other findings, it is shown that the incorporation of F causes a reduction of midgap interface trap density and an increase of maximum transconductance in as-processed devices over a wide range of the F-implant doses studied (0-10/sup 16//cm/sup 2/).<>