Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Sloped-junction LDD (SJLDD) MOSFET structures for improved hot-carrier reliability

By: Jain, S.; Chen, M.-L.; Cochran, W.T.;

1988 / IEEE

Description

This item was taken from the IEEE Periodical ' Sloped-junction LDD (SJLDD) MOSFET structures for improved hot-carrier reliability ' Sloped-junction lightly doped drain (SJLDD) structures, for 0.5- mu m channel length MOSFETs, which exhibit exponential improvement in lifetime under high-field stress with source-drain implant energy are discussed. The improved lifetime correlates with reduced drain electric fields and increased depth of peak avalanche below the silicon-silicon dioxide as determined by simulation. The results present an interesting instance where the substrate current fails as a hot-carrier monitor and provide indirect evidence of a energy-dependent electron mean-free path decreasing from the known 5.7 nm at the impact ionization threshold to less than 3.2 nm at kinetic energy of about 4.6 eV.<>