Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.
Trench transistor DRAM cell
By: Shichijo, H.; Banerjee, S.K.; Chatterjee, P.K.; Shah, A.H.; Davis, H.E.; Gallia, J.; Wang, C.-P.; Elahy, M.; Womack, R.H.; Bordelon, D.M.; Richardson, W.F.; Pollack, G.P.; Malhi, S.D.S.;
1986 / IEEE
Description
This item was taken from the IEEE Periodical ' Trench transistor DRAM cell ' A new one-transistor DRAM cell with both the transistor and the capacitor fabricated on the trench sidewalls is described. With the signal stored on the polysilicon node surrounded by oxide, the cell is expected to have a high alpha particle immunity. The cell occupies only 9 �m2using 1-�m design rules. This cell size is sufficiently small to enable a 4-Mbit DRAM of reasonable chip size with these design rules, and possesses further scalability for 16-Mbit DRAM's.
Related Topics
Corrugated Surfaces
Scalability
Interface States
Silicon
Substrates
Alpha Particles
Capacitors
Random Access Memory
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas
Engineering
Etching
