Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Process and performance comparison of an 8K × 8-bit SRAM in three stacked CMOS technologies

By: Lam, H.W.; Malhi, S.D.S.; Sundaresan, R.; Hite, L.R.; Chatterjee, P.K.; Hester, R.K.; Shah, A.H.;

1985 / IEEE

Description

This item was taken from the IEEE Periodical ' Process and performance comparison of an 8K × 8-bit SRAM in three stacked CMOS technologies ' Using self-aligned and non-self-aligned stacked CMOS technologies experimental 8K �8-bit static random-access memories (SRAM'S) have been fabricated. Hydrogen passivation has been used to improve the performance of polysilicon devices. An 8K �8-bit SRAM using non-self-aligned memory cells and employing a CW argon laser to anneal the second (active) polysilicon layer has also been fabricated. The fabrication methods and performances of all three SRAM's have been compared.