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Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source
By: Elahy, M.; Pollack, G.P.; Chatterjee, P.K.; Womack, R.; Shah, A.H.; Richardson, W.F.; Banerjee, S.; Shichijo, H.; Bonifield, T.; Malhi, S.D.S.;
1984 / IEEE
This item was taken from the IEEE Periodical ' Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source ' Improvements in polysilicon grain-boundary passivation techniques have made polysilicon MOSFET's increasingly attractive, as vertically stackable circuit components in applications, where high mobility is not a primary requirement. A simple method for the ""last step"" passivation of grain boundaries in polysilicon MOSFET's is presented. The method involves diffusion of atomic hydrogen at 450�C from a plasma-deposited compressive silicon nitride layer for reaction at silicon grain-boundary dangling bond sites. By use of this technique, ON/OFF current ratios of greater than 106can be achieved with drive currents that are sufficient for many circuit applications.