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p-Channel MOSFET's in LPCVD PolySilicon

By: Pinizzotto, R.F.; Bellavance, D.W.; Chatterjee, P.K.; Malhi, S.D.S.; Lam, H.W.; Shah, R.R.; Shichijo, H.; Chen, C.E.C.;

1983 / IEEE

Description

This item was taken from the IEEE Periodical ' p-Channel MOSFET's in LPCVD PolySilicon ' p-channel MOSFET's have been fabricated in LPCVD polysilicon. A 5000-�n+poly acts as the gate electrode on which a 500-�thermal oxide is grown to act as the gate insulator. Then a 1500-�LPCVD polysilicon layer is deposited at 620�C and is subsequently boron doped to form the conductive channel. Devices with channel length as small as 2 �m show well-behaved transistor characteristics. The drive current and leakage current are as suitable for usage as load element in memory applications. At large gate voltages the accumulation hole mobility is 9 cm2/V.s. The drain-to-source breakdown voltage exceeds -20 V.