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VB-1 characteristics of p-channel MOSFETs in LPCVD polysilicon and effect of grain boundary passivation on device performance

By: Malhi, S.D.S.; Shah, R.R.; Chatterjee, P.K.; Lam, H.W.; Pinizzoto, R.F.; Chen, C.E.C.; Bellavance, D.W.; Shichijo, H.;

1983 / IEEE

Description

This item was taken from the IEEE Periodical ' VB-1 characteristics of p-channel MOSFETs in LPCVD polysilicon and effect of grain boundary passivation on device performance '