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Addendum to "Design of Microwave GaAs MESFET's for Broad-Band Low-Noise Amplifiers"

By: Fukui, H.;

1981 / IEEE

Description

This item was taken from the IEEE Periodical ' Addendum to "Design of Microwave GaAs MESFET's for Broad-Band Low-Noise Amplifiers" ' It has been called to the author's attention that (3) in the above paper appears to be inadequate, especially for scaling.