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Subsurface junction field effect transistor

By: Malhi, S.D.S.; Salama, C.A.T.; Donnison, W.R.; Barber, H.D.;

1981 / IEEE


This item was taken from the IEEE Periodical ' Subsurface junction field effect transistor ' A novel bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single boron implant at energies high enough to result in a p-type channel fully embedded in an n-epitaxial background material. The channel is buffered from the Si-SiO2interface by a thin n-type region which improves device reproducibility. The structure has been used to make subvolt pinchoff devices especially suitable for micropower low voltage operation.