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Subsurface junction field effect transistor
1981 / IEEE
This item was taken from the IEEE Periodical ' Subsurface junction field effect transistor ' A novel bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single boron implant at energies high enough to result in a p-type channel fully embedded in an n-epitaxial background material. The channel is buffered from the Si-SiO